ITCZ shift and extratropical teleconnections drive ENSO response to volcanic eruptions

The mechanisms through which volcanic eruptions affect the El Niño-Southern Oscillation (ENSO) state are still controversial. Previous studies have invoked direct radiative forcing, an ocean dynamical thermostat (ODT) mechanism, and shifts of the Intertropical Convergence Zone (ITCZ), among others, to explain the ENSO response to tropical eruptions. Here, these mechanisms are tested using ensemble simulations with an Earth system model in which volcanic aerosols from a Tambora-like eruption are confined either in the Northern or the Southern Hemisphere. We show that the primary drivers of the ENSO response are the shifts of the ITCZ together with extratropical circulation changes, which affect the tropics; the ODT mechanism does not operate in our simulations. Our study highlights the importance of initial conditions in the ENSO response to tropical volcanic eruptions and provides explanations for the predominance of posteruption El Niño events and for the occasional posteruption La Niña in observations and reconstructions

Sharp Weyl Estimates for Tensor Products of Pseudodifferential Operators

We study the asymptotic behavior of the counting function of tensor products of operators, in the cases where the factors are either pseudodifferential operators on closed manifolds, or pseudodifferential operators of Shubin type on $\mathbb{R}^n$, respectively. We obtain, in particular, the sharpness of the remainder term in the corresponding Weyl formulae, which we prove by means of the analysis of some explicit examples.Comment: 27 pages, 3 figures. Corrected typo

Poor electronic screening in lightly doped Mott insulators observed with scanning tunneling microscopy

The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ and that, at doping concentrations of $x\leq 4 \%$, it causes the measured energy gap in the sample density of states to be bigger than the one measured with other techniques. We develop a model able to retrieve the intrinsic energy gap leading to a value which is in rough agreement with other experiments, bridging the apparent contradiction. At doping $x \approx 5 \%$ we further observe circular features in the conductance layers that point to the emergence of a significant density of free carriers in this doping range, and to the presence of a small concentration of donor atoms. We illustrate the importance of considering the presence of TIBB when doing STM experiments on correlated-electron systems and discuss the similarities and differences between STM measurements on semiconductors and lightly doped Mott insulators.Comment: 9 pages, 5 figure